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Effect of H[sub 2] addition on surface reactions during CF[sub 4]/H[sub 2] plasma etching of silicon and silicon dioxide films

Effect of H[sub 2] addition on surface reactions during CF[sub 4]/H[sub 2] plasma etching of silicon and silicon dioxide films

Marra, Denise C.
  • 期刊名称Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
  • 作者Marra, Denise C.
  • 卷第15卷
  • 期第5期
  • 印刷ISSN0734-2101
  • 文件大小520.37KB
  • 发表时间1997-9
  • DOI10.1116/1.580762
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