[IEEE 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (Cat. No.97TH8276) - Montreal, Que., Canada (11-15 Aug. 1997)] 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (C - Dynamically stable polarization characteristics of oxide-confinement vertical-cavity surface-emitting lasers grown on GaAs(311)A substrate

• 作者Takahashi, M.; Egami, N.; Mizutani, A.; Matsutani, A.; Koyama, F.; Iga, K.
• 文件大小199.05KB
• 发表时间1997
• DOI10.1109/LEOSST.1997.619093
• 页码35-36