[IEEE International Electron Devices Meeting. IEDM Technical Digest - Washington, DC, USA (7-10 Dec. 1997)] International Electron Devices Meeting. IEDM Technical Digest - A high performance 1.8 V, 0.20 μm CMOS technology with copper metallization

Venkatesan, S.; Gelatos, A.V.; Hisra, S.; Smith, B.; Islam, R.; Cope, J.; Wilson, B.; Tuttle, D.; Cardwell, R.; Anderson, S.; Angyal, M.; Bajaj, R.; Capasso, C.; Crabtree, P.; Das, S.; Farkas, J.; Filipiak, S.; Fiordalice, B.; Freeman, M.; Gilbert, P.V.; Herrick, M.; Jain, A.; Kawasaki, H.; King, C.; Klein, J.; Lii, T.; Reid, K.; Saaranen, T.; Simpson, C.; Sparks, T.; Tsui, P.; Venkatraman, R.; Watts, D.; Weitzman, E.J.; Woodruff, R.; Yang, I.; Bhat, N.; Hamilton, G.; Yu, Y.

作者Venkatesan, S.; Gelatos, A.V.; Hisra, S.; Smith, B.; Islam, R.; Cope, J.; Wilson, B.; Tuttle, D.; Cardwell, R.; Anderson, S.; Angyal, M.; Bajaj, R.; Capasso, C.; Crabtree, P.; Das, S.; Farkas, J.; Filipiak, S.; Fiordalice, B.; Freeman, M.; Gilbert, P.V.; Herrick, M.; Jain, A.; Kawasaki, H.; King, C.; Klein, J.; Lii, T.; Reid, K.; Saaranen, T.; Simpson, C.; Sparks, T.; Tsui, P.; Venkatraman, R.; Watts, D.; Weitzman, E.J.; Woodruff, R.; Yang, I.; Bhat, N.; Hamilton, G.; Yu, Y.
文件大小609.66KB
发表时间1997
DOI10.1109/iedm.1997.650495
页码769-772

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[IEEE International Electron Devices Meeting. IEDM Technical Digest - Washington, DC, USA (7-10 Dec. 1997)] International Electron Devices Meeting. IEDM Technical Digest - A high performance 1.8 V, 0.20 μm CMOS technology with copper metallization