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Quantitative assessment of the effects of carrier screening on the average electric field in a GaAs-based p–i–n nanostructure under subpicosecond laser excitation

Quantitative assessment of the effects of carrier screening on the average electric field in a GaAs-based p–i–n nanostructure under subpicosecond laser excitation

Tsen, K. T.; Joshi, R. P.; Salvador, A.; Botcharev, A.; Morkoc, H.

期刊名称Journal of Applied Physics
作者Tsen, K. T.; Joshi, R. P.; Salvador, A.; Botcharev, A.; Morkoc, H.
卷第81卷
期第1期
印刷ISSN0021-8979
文件大小318.36KB
发表时间1997
DOI10.1063/1.364072

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