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Phenomena at HeterojunctionsVan Ruyven, L. J. · 1972
Electron trapping in neutron transmutation doped siliconvan Ruyven, L. J.; Ammerlaan, C. A. J. · Applied Physics Letters · 1979
Electronic Transport in Graded-Band-Gap SemiconductorsVan Ruyven, L. J. · American Journal of Physics · 1967
TIME-DEPENDENT ELECTRICAL CONDUCTION IN RUTILE SINGLE CRYSTALSVan Ruyven, L. J. · Applied Physics Letters · 1968
The Position of the Fermi Level at a Hetero-Junction InterfaceL. J. van Ruyven · 1964
ChemInform Abstract: THE INFLUENCE OF LEAKAGE CURRENT ON CONCENTRATION PROFILE MEASUREMENTSKRAMER, P.; DE VRIES, C.; VAN RUYVEN, L. J. · Chemischer Informationsdienst · 1975
Hall-effect determination of the N-trap bound state in GaAs1−xPxvan Ruyven, L. J.; Bluyssen, H. J. A.; van der Heijden, R. W.; Tan, T. B.; Ralph, H. I. · Applied Physics Letters · 1977
Electro-rheologyBlock, H; Kelly, J P · Journal of Physics D: Applied Physics · 1988
Semiconductor nanowiresLu, Wei; Lieber, Charles M · Journal of Physics D: Applied Physics · 2006
Nanoassembled model catalystsHeiz, Ueli; Schneider, Wolf-Dieter · Journal of Physics D: Applied Physics · 2000
Mechanisms for exchange biasStamps, R L · Journal of Physics D: Applied Physics · 2000
Thermal plasma waste treatmentHeberlein, Joachim; Murphy, Anthony B · Journal of Physics D: Applied Physics · 2008
Surface enhanced fluorescenceFort, Emmanuel; Grésillon, Samuel · Journal of Physics D: Applied Physics · 2008
Nanocomposite dielectrics—properties and implicationsNelson, J K; Hu, Y · Journal of Physics D: Applied Physics · 2005
Memristor-based neural networksThomas, Andy · Journal of Physics D: Applied Physics · 2013