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[IEEE 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (Cat. No.97TH8276) - Montreal, Que., Canada (11-15 Aug. 1997)] 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (C - MOCVD growth, characterization and stability of high quality InGaN MQW structures

[IEEE 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (Cat. No.97TH8276) - Montreal, Que., Canada (11-15 Aug. 1997)] 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (C - MOCVD growth, characterization and stability of high quality InGaN MQW structures

Ramer, J.C.; Hersee, S.D.
  • 作者Ramer, J.C.; Hersee, S.D.
  • 文件大小45.67KB
  • 发表时间1997
  • DOI10.1109/leosst.1997.619245
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