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Characterization of GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy for High-Temperature Estimation of Phase Coherent Length of Electrons

Characterization of GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy for High-Temperature Estimation of Phase Coherent Length of Electrons

Takemura, Riichiro; Suhara, Michihiko; Oobo, Takashi; Miyamoto, Yasuyuki; Furuya, Kazuhito
  • 期刊名称Japanese Journal of Applied Physics
  • 作者Takemura, Riichiro; Suhara, Michihiko; Oobo, Takashi; Miyamoto, Yasuyuki; Furuya, Kazuhito
  • 卷第36卷
  • 印刷ISSN0021-4922
  • 电子ISSN1347-4065
  • 文件大小496.84KB
  • 发表时间1997-3-30
  • DOI10.1143/JJAP.36.1846
  • 页码1846-1848
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