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Time-dependent simulation of the growth of large silicon crystals by the Czochralski technique using a turbulent model for melt convection

Time-dependent simulation of the growth of large silicon crystals by the Czochralski technique using a turbulent model for melt convection

R. Assaker; N. van den Bogaert; F. Dupret
  • 作者R. Assaker; N. van den Bogaert; F. Dupret
  • 卷第180卷
  • 印刷ISSN0022-0248
  • 文件大小765.93KB
  • 发表时间1997
  • DOI10.1016/s0022-0248(97)00240-6
  • 页码450-460
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