Electrical and structural characterization of PtSi/p-Si[sub 1−x]Ge[sub x] low Schottky barrier junctions prepared by co-sputtering
- 作者O. Nur
- 文件大小723.30KB
- 发表时间1997
- DOI10.1116/1.589272
CHRONIQUE ET BIBLIOGRAPHIEH. H., R., A. Loisy, M. L., Ch. L. and Eng. L. · Revue Historique · 1904
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