Behavior of Defects in Heavily Boron Doped Czochralski Silicon
- 作者T. Ono; E. Asayama; H. Horie; M. Hourai; M. Sano; H. Tsuya; K. Nakai
- 文件大小395.67KB
- 发表时间1997
- DOI10.1143/JJAP.36.L249
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