Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC
- 作者Satoru Tanaka; Sohachi Iwai; Yoshinobu Aoyagi
- 卷第170卷
- 印刷ISSN0022-0248
- 文件大小960.49KB
- 发表时间1997
- DOI10.1016/s0022-0248(96)00611-2
- 页码329-334
同作者推荐
Thermodynamic study on the role of hydrogen during the MOVPE growth of group III nitridesAkinori Koukitu; Tetsuya Taki; Naoyuki Takahashi; Hisashi Seki · 1999
In Situ Monitoring of the Chemisorption of Hydrogen Atoms on (001) GaAs Surface in GaAs Atomic Layer EpitaxyKoukitu, Akinori; Taki, Tetsuya; Takahashi, Naoyuki; Seki, Hisashi · Japanese Journal of Applied Physics · 1996
Thermodynamic Analysis of $bf In_{ninmbi x}Ga_{1-{ninmbi x}}N$ Alloy Composition Grown by Metalorganic Vapor Phase EpitaxyKoukitu, Akinori; Takahashi, Naoyuki; Taki, Tetsuya; Seki, Hisashi · Japanese Journal of Applied Physics · 1996