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[IEEE Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials - Tsukuba, Japan (11-15 May 1998)] Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) - Electrochemical etching in wet-chemical gate recess for InAlAs/InGaAs heterojunction FETs

[IEEE Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials - Tsukuba, Japan (11-15 May 1998)] Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) - Electrochemical etching in wet-chemical gate recess for InAlAs/InGaAs heterojunction FETs

Dong Xu, ; Enoki, T.; Suemitsu, T.; Ishii, Y.

作者Dong Xu, ; Enoki, T.; Suemitsu, T.; Ishii, Y.
文件大小404.23KB
发表时间1998
DOI10.1109/ICIPRM.1998.712787
页码797-800

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