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[IEEE 1998 Fourth International High Temperature Electronics Conference. HITEC - Albuquerque, NM, USA (14-18 June 1998)] 1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145) - Electrical characteristics of tantalum and tantalum carbide Schottky diodes on n- and p-type silicon carbide as a function of temperature

[IEEE 1998 Fourth International High Temperature Electronics Conference. HITEC - Albuquerque, NM, USA (14-18 June 1998)] 1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145) - Electrical characteristics of tantalum and tantalum carbide Schottky diodes on n- and p-type silicon carbide as a function of temperature

Jang, T.; Porter, L.M.

作者Jang, T.; Porter, L.M.
文件大小413.19KB
发表时间1998
DOI10.1109/hitec.1998.676804
页码280-286

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