The effects of arsenic pressure on the properties of In1−x−yGaxAlyAs layers grown by molecular beam epitaxy
- 作者S.F Yoon; P.H Zhang; H.Q Zheng; K Radhakrishnan
- 卷第191卷
- 印刷ISSN0022-0248
- 文件大小101.16KB
- 发表时间1998
- DOI10.1016/s0022-0248(98)00007-4
- 页码24-30
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