Effects of substrate temperature on the properties of In0.48Ga0.52P grown by molecular-beam epitaxy using a valved phosphorus cracker cell
- 作者S.F Yoon; K.W Mah; H.Q Zheng; P.H Zhang
- 卷第191卷
- 期第4期
- 印刷ISSN0022-0248
- 文件大小112.08KB
- 发表时间1998
- DOI10.1016/s0022-0248(98)00386-8
- 页码613-620