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Influence of thermal annealing on the intensity of the 1.54-µm photoluminescence band in erbium-doped amorphous hydrogenated silicon

Influence of thermal annealing on the intensity of the 1.54-µm photoluminescence band in erbium-doped amorphous hydrogenated silicon

A. A. Andreev; V. B. Voronkov; V. G. Golubev; A. V. Medvedev; A. B. Pevtsov
  • 作者A. A. Andreev; V. B. Voronkov; V. G. Golubev; A. V. Medvedev; A. B. Pevtsov
  • 卷第33卷
  • 期第1期
  • 印刷ISSN1063-7826
  • 电子ISSN1090-6479
  • 文件大小73.71KB
  • 发表时间1999-01
  • DOI10.1134/1.1187654
  • 页码93-96
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