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Molecular beam epitaxial growth of In1−x−yGaxAlyAs: effects of substrate temperature and V/III ratio

Molecular beam epitaxial growth of In1−x−yGaxAlyAs: effects of substrate temperature and V/III ratio

S.F Yoon; P.H Zhang; H.Q Zheng; K Radhakrishnan
  • 作者S.F Yoon; P.H Zhang; H.Q Zheng; K Radhakrishnan
  • 卷第59卷
  • 期第1期
  • 印刷ISSN0254-0584
  • 文件大小157.65KB
  • 发表时间1999
  • DOI10.1016/s0254-0584(99)00031-0
  • 页码20-25
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