$Low energy electron diffraction and photoelectron spectroscopy study of GaAs(113)A and (1̄1̄3̄)B surfaces prepared by molecular beam epitaxy and by ion bombardment and annealing$

Low energy electron diffraction and photoelectron spectroscopy study of GaAs(113)A and (1̄1̄3̄)B surfaces prepared by molecular beam epitaxy and by ion bombardment and annealing

C. Setzer; J. Platen; W. Ranke; K. Jacobi

作者C. Setzer; J. Platen; W. Ranke; K. Jacobi
卷第419卷
印刷ISSN0039-6028
文件大小600.34KB
发表时间1999
DOI10.1016/s0039-6028(98)00807-3

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Low energy electron diffraction and photoelectron spectroscopy study of GaAs(113)A and (1̄1̄3̄)B surfaces prepared by molecular beam epitaxy and by ion bombardment and annealing