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Effects of extreme disorder on electronic properties in δ-doped semiconductor microstructures—a realistic computer simulation

Effects of extreme disorder on electronic properties in δ-doped semiconductor microstructures—a realistic computer simulation

C. Metzner; M. Hofmann; G.H. Döhler

作者C. Metzner; M. Hofmann; G.H. Döhler
卷第25卷
印刷ISSN0749-6036
电子ISSN1096-3677
文件大小79.47KB
发表时间1999
DOI10.1006/spmi.1998.0689
页码239-246

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