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Admittance spectroscopy analysis of the conduction band offsets in Si/Si[sub 1−x−y]Ge[sub x]C[sub y] and Si/Si[sub 1−y]C[sub y] heterostructures

Admittance spectroscopy analysis of the conduction band offsets in Si/Si[sub 1−x−y]Ge[sub x]C[sub y] and Si/Si[sub 1−y]C[sub y] heterostructures

Singh, D. V.; Rim, K.; Mitchell, T. O.; Hoyt, J. L.; Gibbons, J. F.

期刊名称Journal of Applied Physics
作者Singh, D. V.; Rim, K.; Mitchell, T. O.; Hoyt, J. L.; Gibbons, J. F.
卷第85卷
期第2期
印刷ISSN0021-8979
文件大小345.66KB
发表时间1999
DOI10.1063/1.369219

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