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Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy

Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy

Bertram, F.; Riemann, T.; Christen, J.; Kaschner, A.; Hoffmann, A.; Thomsen, C.; Hiramatsu, K.; Shibata, T.; Sawaki, N.
  • 期刊名称Applied Physics Letters
  • 作者Bertram, F.; Riemann, T.; Christen, J.; Kaschner, A.; Hoffmann, A.; Thomsen, C.; Hiramatsu, K.; Shibata, T.; Sawaki, N.
  • 卷第74卷
  • 期第3期
  • 印刷ISSN0003-6951
  • 文件大小444.76KB
  • 发表时间1999
  • DOI10.1063/1.123071
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