Properties of Metal-Semiconductor Interfaces Formed on n-Type GaN
- 期刊名称Japanese Journal of Applied Physics
- 作者Hasegawa, Hideki; Koyama, Yuji; Hashizume, Tamotsu
- 卷第38卷
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小196.38KB
- 发表时间1999-4-30
- DOI10.1143/jjap.38.2634
- 页码2634-2639
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