发现好书期刊，享受阅读乐趣

海量图书期刊资源，随时随地畅享阅读乐趣

InP/InxGa1−xAs (0.53⩽x⩽0.81) high electron mobility transistor structures grown by solid source molecular beam epitaxy

InP/InxGa1−xAs (0.53⩽x⩽0.81) high electron mobility transistor structures grown by solid source molecular beam epitaxy

K Radhakrishnan; T.H.K Patrick; H.Q Zheng; P.H Zhang; S.F Yoon

作者K Radhakrishnan; T.H.K Patrick; H.Q Zheng; P.H Zhang; S.F Yoon
卷第207卷
印刷ISSN0022-0248
文件大小151.09KB
发表时间1999
DOI10.1016/s0022-0248(99)00353-x
页码8-14

← 返回【学霸图书馆】主页