Characterization of InGaAs Phosphidized by a Plasma Process
- 期刊名称Japanese Journal of Applied Physics
- 作者Miyazaki, Takashi; Sugino, Takashi; Matsuda, Koichiro; Shirafuji, Junji
- 卷第38卷
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小180.08KB
- 发表时间1999-2-28
- DOI10.1143/JJAP.38.1139
- 页码1139-1142
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