Electrical and structural properties of low temperature boron- and phosphorus-doped polycrystalline silicon thin films prepared by ECR-CVD
- 作者H.L Hsiao; Y.Y Shieh; R.S Lee; R.Y Wang; K.C Wang; H.L Hwang; A.B Yang
- 卷第142卷
- 印刷ISSN0169-4332
- 文件大小2162.23KB
- 发表时间1999
- DOI10.1016/s0169-4332(98)00683-7
- 页码400-406
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