OH-related emitting centers in interface layer of porous silicon
- 作者T.V Torchynska; M.K Sheinkman; N.E Korsunskaya; L.Yu Khomenkovan; B.M Bulakh; B.R Dzhumaev; A Many; Y Goldstein; E Savir
- 印刷ISSN0921-4526
- 文件大小134.86KB
- 发表时间1999
- DOI10.1016/s0921-4526(99)00563-3
- 页码955-958
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