Effect of annealing on the electrical, optical and structural properties of hydrogenated amorphous silicon films deposited in an asymmetric R.F. plasma CVD system at room temperature

• 作者O.S Panwar; C Mukherjee; R Bhattacharyya
• 卷第57卷
• 期第4期
• 印刷ISSN0927-0248
• 文件大小1216.47KB
• 发表时间1999
• DOI10.1016/s0927-0248(98)00193-7
• 页码373-391