Novel Dual Gate Oxide Process with Improved Gate Oxide Integrity Reliability
- 期刊名称Electrochemical and Solid-State Letters
- 作者Lee, Seok-Woo
- 卷第3卷
- 期第1期
- 印刷ISSN1099-0062
- 文件大小613.26KB
- 发表时间1999
- DOI10.1149/1.1390957
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