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Electron transport across bulk (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P barriers determined from the I-V characteristics of n-i-n diodes measured between 60 and 310 K

Electron transport across bulk (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P barriers determined from the I-V characteristics of n-i-n diodes measured between 60 and 310 K

Morrison, A.P.; Lambkin, J.D.; van der Poel, C.J.; Valster, A.

作者Morrison, A.P.; Lambkin, J.D.; van der Poel, C.J.; Valster, A.
卷第36卷
期第11期
印刷ISSN0018-9197
电子ISSN1558-1713
文件大小165.54KB
发表时间2000
DOI10.1109/3.890277

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