Insulator-GaN interface structures formed by plasma-assisted chemical vapor deposition
- 作者Ryuusuke Nakasaki; Tamotsu Hashizume; Hideki Hasegawa
- 卷第7卷
- 文件大小257.67KB
- 发表时间2000
- DOI10.1016/s1386-9477(00)00095-3
- 页码953-957
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