Transport of heavily boron-doped synthetic semiconductor diamond in the hopping regime
- 期刊名称Physical Review B
- 作者Sato, Toshimaro; Ohashi, Kazutoshi; Sugai, Hiroyuki; Sumi, Takashi; Haruna, Katsuji; Maeta, Hiroshi; Matsumoto, Norimasa; Otsuka, Hideo
- 卷第61卷
- 期第19期
- 印刷ISSN0163-1829
- 电子ISSN1095-3795
- 文件大小94.75KB
- 发表时间2000-5-15
- DOI10.1103/PhysRevB.61.12970
- 页码12970-12976
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