发现好书期刊，享受阅读乐趣

海量图书期刊资源，随时随地畅享阅读乐趣

Turn-on voltage investigation of GaAs-based bipolar transistors with Ga/sub 1-x/In/sub x/As/sub 1-y/N<sub/>y</sub> base layers

Turn-on voltage investigation of GaAs-based bipolar transistors with Ga/sub 1-x/In/sub x/As/sub 1-y/N_y base layers

Welser, R.E.; DeLuca, P.M.; Pan, N.

期刊名称IEEE Electron Device Letters
作者Welser, R.E.; DeLuca, P.M.; Pan, N.
卷第21卷
期第12期
印刷ISSN0741-3106
电子ISSN1558-0563
文件大小82.65KB
发表时间2000-12
DOI10.1109/55.887463
页码554-556

← 返回【学霸图书馆】主页