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Correlation between the gate bias dependence of the probability of anode hole injection and breakdown in thin silicon dioxide films

Correlation between the gate bias dependence of the probability of anode hole injection and breakdown in thin silicon dioxide films

Samanta, Piyas; Sarkar, C. K.
  • 期刊名称Applied Physics Letters
  • 作者Samanta, Piyas; Sarkar, C. K.
  • 卷第77卷
  • 期第26期
  • 印刷ISSN0003-6951
  • 文件大小306.54KB
  • 发表时间2000
  • DOI10.1063/1.1332838
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