High sensitivity measurement of implanted As in the presence of Ge in Ge[sub x]Si[sub 1−x]/Si layered alloys using trace element accelerator mass spectrometry
Datar, S. A.; Wu, Liying; Guo, B. N.; Nigam, M.; Necsoiu, D.; Zhai, Y. J.; Smith, D. E.; Yang, C.; Bouanani, M. E.; Lee, J. J.; McDaniel, F. D.
- 期刊名称Applied Physics Letters
- 作者Datar, S. A.; Wu, Liying; Guo, B. N.; Nigam, M.; Necsoiu, D.; Zhai, Y. J.; Smith, D. E.; Yang, C.; Bouanani, M. E.; Lee, J. J.; McDaniel, F. D.
- 卷第77卷
- 期第24期
- 印刷ISSN0003-6951
- 文件大小236.58KB
- 发表时间2000
- DOI10.1063/1.1331093