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Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy

Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy

G. Ru; X. Qu; S. Zhu; B. Li; C. Detavernier; R. L. Van Meirhaeghe; F. Cardon; R. A. Donaton; K. Maex
  • 作者G. Ru; X. Qu; S. Zhu; B. Li; C. Detavernier; R. L. Van Meirhaeghe; F. Cardon; R. A. Donaton; K. Maex
  • 文件大小504.86KB
  • 发表时间2000
  • DOI10.1116/1.1305269
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