De Haas–Van Alphen effect study of CeCo2 under pressure
- 作者M. Takashita; H. Aoki; T. Terashima; C. Terakura; T. Matsumoto; T. Nishigaki; H. Sugawara; Y. Aoki; H. Sato
- 印刷ISSN0921-4526
- 文件大小96.49KB
- 发表时间2000
- DOI10.1016/s0921-4526(99)00883-2
- 页码738-739
Void structure in models of vitreous silicaS.N. Taraskin; S.R. Elliott; M.I. Klinger · 1995
The role of negative-U centres in the photoconductivity of glassy semiconductorsM.I. Klinger; V.G. Kudryavtsev; M.I. Ryazanov; S.N. Taraskin · 1987
Exact solution of the problem of two-level crossingM.I. Klinger; S.N. Taraskin · 1992
Thermally activated configurational tunneling at trapping and recombination in glassy semiconductorsM.I. Klinger; S.N. Taraskin · 1993
Pressure-induced delocalization of negative-U centres in semiconducting glassesM.I. Klinger; S.N. Taraskin · 1997
On the fast crossing of a quasicontinuum energy band by a moving energy levelM.I. Klinger; V.N. Chukov; S.N. Taraskin · 1993
Pressure induced effects in glassy semiconductors: Variations of negative-U center properties and related superconductivityM.I. Klinger; S.N. Taraskin · 1993