[IEEE 2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings - Sinaia, Romania (10-14 Oct. 2000)] 2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486) - Some properties of SiC layers obtained from C/sub 60/ precursors
- 作者Tomozeiu, N.; De Seta, M.
- 卷第1卷
- 文件大小563.80KB
- 发表时间2000
- DOI10.1109/smicnd.2000.890217
- 页码197-200
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