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Oxygen stability, diffusion, and precipitation in SiC: Implications for thin-film oxidation

Oxygen stability, diffusion, and precipitation in SiC: Implications for thin-film oxidation

Massimiliano di Ventra; Sokrates T. Pantelides
  • 作者Massimiliano di Ventra; Sokrates T. Pantelides
  • 卷第29卷
  • 期第3期
  • 印刷ISSN0361-5235
  • 电子ISSN1543-186X
  • 文件大小146.54KB
  • 发表时间2000
  • DOI10.1007/s11664-000-0076-6
  • 页码353-358
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