Raman and photoluminescence spectroscopy from N2+-ion implanted and α-irradiated and annealed GaN/sapphire
- 作者H.W. Kunert; T.P. Maurice; D.J. Brink; L.C. Prinsloo; J.B. Malherbe; J. Camassel
- 卷第181卷
- 印刷ISSN0168-583X
- 文件大小214.92KB
- 发表时间2001
- DOI10.1016/s0168-583x(01)00376-7
- 页码286-292
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