Infrared Detectors and Emitters: Materials and Devices Volume 510 || Growth, Properties and Infrared Device Characteristics of Strained Inassb-Based Materials
- 作者Capper, Peter; Elliott, C. T.
- 文件大小3092.57KB
- 发表时间2001
- DOI10.1007/978-1-4615-1607-1_8
- 页码205-232
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