A novel low-voltage content-addressable-memory (CAM) cell with a fast tag-compare capability using partially depleted (PD) SOI CMOS dynamic-threshold (DTMOS) techniques
Liu, S.C.; Wu, F.A.; Kuo, J.B.
- 作者Liu, S.C.; Wu, F.A.; Kuo, J.B.
- 卷第36卷
- 期第4期
- 文件大小162.66KB
- 发表时间2001
- DOI10.1109/4.913752
- 页码712-716