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Crystalline to amorphous transition and band structure evolution in ion-damaged silicon studied by spectroscopic ellipsometry

Crystalline to amorphous transition and band structure evolution in ion-damaged silicon studied by spectroscopic ellipsometry

Giri, P. K.; Tripurasundari, S.; Raghavan, G.; Panigrahi, B. K.; Magudapathy, P.; Nair, K. G. M.; Tyagi, A. K.
  • 期刊名称Journal of Applied Physics
  • 作者Giri, P. K.; Tripurasundari, S.; Raghavan, G.; Panigrahi, B. K.; Magudapathy, P.; Nair, K. G. M.; Tyagi, A. K.
  • 卷第90卷
  • 期第2期
  • 印刷ISSN0021-8979
  • 文件大小364.58KB
  • 发表时间2001
  • DOI10.1063/1.1379055
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