[Japan Soc. Appl. Phys 2001 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (12-14 June 2001)] 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) - A new storage node pad formation technology-line type SAC with oxide spacer (LSOS) and direct metal plug (DMP)-for 0.115 μm tech and beyond
- 作者Yoon, K.H.; Park, S.C.; Lee, M.S.; Huh, M.; Bae, Y.H.; Kim, S.I.; Kim, J.W.; Yoon, H.K.
- 文件大小388.24KB
- 发表时间2001
- DOI10.1109/vlsit.2001.934983
- 页码129-130
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