Effects of post-deposition treatments on ultrathin nitride/oxide gate stack prepared by RTCVD for ULSI devices

C.H. Chen; Y.K. Fang; C.W. Yang; S.F. Ting; Y.S. Tsair; M.F. Wang; S.C. Chen; C.H. Yu; M.S. Liang

作者C.H. Chen; Y.K. Fang; C.W. Yang; S.F. Ting; Y.S. Tsair; M.F. Wang; S.C. Chen; C.H. Yu; M.S. Liang
卷第45卷
期第3期
印刷ISSN0038-1101
文件大小170.03KB
发表时间2001
DOI10.1016/s0038-1101(01)00019-3
页码461-465

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