On the growth mechanism of a-Si:H
- 作者W.M.M. Kessels; A.H.M. Smets; D.C. Marra; E.S. Aydil; D.C. Schram; M.C.M. van de Sanden
- 卷第383卷
- 印刷ISSN0040-6090
- 文件大小264.20KB
- 发表时间2001
- DOI10.1016/s0040-6090(00)01594-7
- 页码154-160
Large improvement in intersubband saturation intensity in InGaAs/AlAsSb quantum wellGopal, A.V.; Yoshida, H.; Neogi, A.; Mozume, T.; Georgiev, N.; Simoyama, T.; Wada, O.; Ishikawa, H. · Electronics Letters · 2001
Understanding the ultra-low intersubband saturation intensity in InGaAs-AlAsSb quantum wellsGopal, A.V.; Yoshida, H.; Simoyama, T.; Georgiev, N.; Mozume, T.; Ishikawa, H. · 2003
Photoluminescence and photoreflectance characterization of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxyT Mozume; N Georgiev · 2002
Intersubband transition in InGaAs/AlAsSb/InP coupled double quantum well structures optimised for communication wavelength operationNeogi, A.; Yoshida, H.; Mozume, T.; Georgiev, N.; Akiyama, T.; Wada, O. · Electronics Letters · 2000
Nonlinearity and recovery time of 1.55 [micro sign]m intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wellsAkiyama, T.; Georgiev, N.; Mozume, T.; Yoshida, H.; Venu Gopal, A.; Wada, O. · Electronics Letters · 2001
Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxyT Mozume; N Georgiev; H Yoshida · 2001
1.55-μm picosecond all-optical switching by using intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wellsAkiyama, T.; Georgiev, N.; Mozume, T.; Yoshida, H.; Gopal, A.V.; Wada, O. · 2002