Plasma Source Ion Implantation for Ultrashallow Junctions: Low Energy and High Dose Rate
- 作者J. Cho; S. Han; Y. Lee; O. K. Kim; G. Kim; Y. Kim; H. Lim; H. S. Jung
- 文件大小62.55KB
- 发表时间2001
- DOI10.1143/JJAP.40.2506
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