The transient signal response of submicron vertical silicon field effect transistors
- 期刊名称Semiconductor Science and Technology
- 作者Crow, G C; Abram, R A
- 卷第16卷
- 期第4期
- 印刷ISSN0268-1242
- 电子ISSN1361-6641
- 文件大小184.08KB
- 发表时间2001-04-01
- DOI10.1088/0268-1242/16/4/311
- 页码250-254
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