Study of aluminum and gold as the gate electrode material on silicon nitride based MIS devices
- 作者Mohua Bose; D.K Basa; D.N Bose
- 卷第171卷
- 印刷ISSN0169-4332
- 文件大小127.60KB
- 发表时间2001
- DOI10.1016/s0169-4332(00)00557-2
- 页码130-135
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