The base contact recombination current and its effect on the current gain of surface-passivated InGaP/GaAs HBTs
- 作者Jong-Min Lee; Tae-Woo Lee; Sung Ho Park; Byoung-Gue Min; Moon-Pyung Park; Kyung-Ho Lee; In-Hoon Choi
- 卷第79卷
- 期第1期
- 印刷ISSN0921-5107
- 文件大小155.68KB
- 发表时间2001
- DOI10.1016/s0921-5107(00)00557-2
- 页码63-67