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[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Enhanced advancing front Delaunay meshing in TCAD

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Enhanced advancing front Delaunay meshing in TCAD

Fleischmann, P.; Selberherr, S.

作者Fleischmann, P.; Selberherr, S.
文件大小382.04KB
发表时间2002
DOI10.1109/SISPAD.2002.1034526
页码99-102

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